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PE3401 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.4A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram Marking and Pin Assignment.

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Datasheet Details

Part number PE3401
Manufacturer semi one
File Size 808.04 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3401 Datasheet
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Full PDF Text Transcription

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PE3401 P-Channel Enhancement Mode Power MOSFET Description The PE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.4A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.
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