CI02S120E3
CI02S120E3 is SiC Schottky Barrier Diode manufactured by tokmas.
Features
- 1.2k V Schottky Rectifier
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching
- Extremely Fast Switching
- Positive Temperature Coefficient on VF Benefits
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway Applications
- Switch Mode Power Supplies (SMPS)
- Boost Diodes in PFC or DC/DC stages
- Free Wheeling Diodes in Inverter stages
- LED Lighting Power Supplies
- AC/DC Converters
Package
PIN 1 PIN 2
CASE
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM VRSM VDC
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage
Maximum DC Current
IFRM IFSM IF,Max Ptot d V/dt
Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Current Power Dissipation Diode d V/dt ruggedness
∫i2dt i2t value
TJ , Tstg Operating Junction and Storage Temperature
10 5 2 13 8.4 19 16.5 200 160 60 26
1.8 1.4 -55 to...
