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CI02S120E3 - SiC Schottky Barrier Diode

Key Features

  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF Benefits.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • Parallel Devices Without Thermal Runaway.

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Datasheet Details

Part number CI02S120E3
Manufacturer tokmas
File Size 395.35 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet CI02S120E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI02S120E3 Features • 1.