CI04S65E3 Description
SiC Schottky Barrier Diode CI04S65E3.
CI04S65E3 Key Features
- 650-Volt Schottky Rectifier
- Optimized for PFC Boost Diode Application
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF Benefits
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses