CI04S65E3
CI04S65E3 is SiC Schottky Barrier Diode manufactured by tokmas.
Features
- 650-Volt Schottky Rectifier
- Optimized for PFC Boost Diode Application
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF Benefits
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway Applications
- Switch Mode Power Supplies (SMPS)
- Boost diodes in PFC or DC/DC stages
- Free Wheeling Diodes in Inverter stages
- AC/DC converters
Package
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
VRSM
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM IFSM IF,Max Ptot d V/dt
Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation Diode d V/dt ruggedness
∫i2dt i2t value
TJ , Tstg Operating Junction and Storage Temperature
13.5 6...
