CI04S65E3 - SiC Schottky Barrier Diode

Datasheet Summary

Features

650-Volt Schottky Rectifier.
Optimized for PFC Boost Diode.

tokmas

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Datasheet Details

Part number	CI04S65E3
Manufacturer	tokmas
File Size	632.21 KB
Description	SiC Schottky Barrier Diode
Datasheet	CI04S65E3 Datasheet
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SiC Schottky Barrier Diode CI04S65E3 Features • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages • AC/DC converters Package Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Re

Published: Dec 16, 2024 |