Datasheet Details
| Part number | QA3111N6N |
|---|---|
| Manufacturer | uPI Semiconductor |
| File Size | 516.40 KB |
| Description | 30V Asymmetric Dual N-Channel Power MOSFET |
| Datasheet |
 QA3111N6N Datasheet
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| Part number | QA3111N6N |
|---|---|
| Manufacturer | uPI Semiconductor |
| File Size | 516.40 KB |
| Description | 30V Asymmetric Dual N-Channel Power MOSFET |
| Datasheet |
QA3111N6N Datasheet
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The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.
It is ideally suited to support synchronous buck converter applications.