Datasheet Details
| Part number | QA3111N6N |
|---|---|
| Manufacturer | uPI Semiconductor |
| File Size | 516.40 KB |
| Description | 30V Asymmetric Dual N-Channel Power MOSFET |
| Datasheet | QA3111N6N-uPISemiconductor.pdf |
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Overview: QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General.
| Part number | QA3111N6N |
|---|---|
| Manufacturer | uPI Semiconductor |
| File Size | 516.40 KB |
| Description | 30V Asymmetric Dual N-Channel Power MOSFET |
| Datasheet | QA3111N6N-uPISemiconductor.pdf |
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The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.
It is ideally suited to support synchronous buck converter applications.
The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability.
| Part Number | Description |
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