QA3111N6N
QA3111N6N is 30V Asymmetric Dual N-Channel Power MOSFET manufactured by uPI Semiconductor.
30V Asymmetric Dual N-Channel Power MOSFET
General Description
The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.
The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Green Device Available
Product Summary
VDS Die1 30V
RDS(ON) max (VGS=10V)
5.6mΩ
ID (TC=25 °C)
59A
Die2 30V
1.3mΩ
135A
Applications
- High Frequency...
