QA3111N6N Overview
The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability.
QA3111N6N Key Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Green Device Available