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QA3111N6N - 30V Asymmetric Dual N-Channel Power MOSFET

General Description

The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Green Device Available Product Summary VDS Die1 30V RDS(ON) max (VGS=10V) 5.6mΩ ID (TC=25 °C) 59A Die2 30V 1.3mΩ 135A.

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Datasheet Details

Part number QA3111N6N
Manufacturer uPI Semiconductor
File Size 516.40 KB
Description 30V Asymmetric Dual N-Channel Power MOSFET
Datasheet download datasheet QA3111N6N Datasheet

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QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General Description The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability. Features  Advanced high cell density Trench technology  Super Low Gate Charge  Excellent CdV/dt effect decline  Green Device Available Product Summary VDS Die1 30V RDS(ON) max (VGS=10V) 5.6mΩ ID (TC=25 °C) 59A Die2 30V 1.