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WTM2302 - N-Channel Enhancement Mode Power MOSFET

Description

The WTM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • V DS = 20V, lD = 2.6A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 56mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – WTM2302

Datasheet Details

Part number WTM2302
Manufacturer wpmtek
File Size 797.70 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet WTM2302 Datasheet
Additional preview pages of the WTM2302 datasheet.

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Full PDF Text Transcription

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WTM2302 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = 20V, lD = 2.6A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 56mΩ @ VGS=4.5V ■ High power and current handing capability ■ Lead free product is acquired ■ Surface mount package Application ■ Battery protection.
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