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WTM2305 - P-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • V DS = -20V, lD = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – WTM2305

Datasheet Details

Part number WTM2305
Manufacturer wpmtek
File Size 767.33 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet WTM2305 Datasheet
Additional preview pages of the WTM2305 datasheet.

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Full PDF Text Transcription

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = -20V, lD = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.
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