1SS190 Datasheet and Specifications PDF

The 1SS190 is a ULTRA HIGH SPEED SWITCHING DIODE.

Key Specifications

PackageTO-236-3
Mount TypeSurface Mount
Max Operating Temp125 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part Number1SS190 Datasheet
ManufacturerKexin Semiconductor
Overview SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS190 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance. Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 2.2pF(Typ.) +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute M axim um Ratings Ta = 25 Param eter Peak Reverse Voltage D.
Part Number1SS190 Datasheet
DescriptionSilicon Epitaxial Planar Type Diode
ManufacturerToshiba
Overview TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59  Low forward voltage : VF (3) = 0.92 V (typ.)  Fa. /voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon re.
Part Number1SS190 Datasheet
DescriptionSurface mount switching diode
ManufacturerGalaxy Microelectronics
Overview Production specification Surface mount switching diode FEATURES  Low forward voltage VF=0.92V(typ).  Small total capacitance:CT=2.2pF(typ).  Fast reverse recovery time:trr=1.6ns(typ) Pb Lead-fre.
* Low forward voltage VF=0.92V(typ).
* Small total capacitance:CT=2.2pF(typ).
* Fast reverse recovery time:trr=1.6ns(typ) Pb Lead-free 1SS190 APPLICATIONS
* High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS190 E3 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃.
Part Number1SS190 Datasheet
DescriptionDIODE
ManufacturerWEJ
Overview RoHS 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junc. TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:E3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unle.

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