20N60A4D Datasheet

The 20N60A4D is a N-Channel IGBT.

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Part Number20N60A4D
Manufactureronsemi
Overview SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transi. of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor. The much lower on
*state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in .
Part Number20N60A4D
DescriptionHGTG20N60A4D
ManufacturerFairchild Semiconductor
Overview HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of . of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in .