2N1132 Datasheet
2N1132 Datasheet (Microsemi)
Microsemi
TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Volta.
VCB = 50 Vdc ICBO VCB = 30 Vdc Min. Max. Unit Vdc Vdc µAdc mAdc µAdc 40 50 100 10 10 1.0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1131, 2N1132 JAN, JANTX ELECTRICAL CHARACTERISTICS (con’t) Characteristics ON CHARACTERISTICS (.
2N1132 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (R BE « 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 2.
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2N1132 Datasheet (TT Electronics)
TT Electronics
SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available .
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