| Part Number | 2N2894 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
The 2N2894 is a Switching Transistor.
| Part Number | 2N2894 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
| Part Number | 2N2894 Datasheet |
|---|---|
| Description | Silicon Planar PNP Transistor |
| Manufacturer | STMicroelectronics |
| Overview | . . |
| Part Number | 2N2894 Datasheet |
|---|---|
| Description | PNP SILICON TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview |
2N2894
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
PNP SILICON TRANSISTOR
FEATURES
• SILICON PNP TRANSISTOR • HIGH SPEED, LOW SATURATION SWITCH
5.33.
* SILICON PNP TRANSISTOR * HIGH SPEED, LOW SATURATION SWITCH 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 2 1 TO18 Underside View PIN 2 * BASE PIN1 * EMITER PIN 3 * COLLECTOR ABSOLUTE MAX. |
| Part Number | 2N2894 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Comset Semiconductor |
| Overview | NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications. Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 µA IC =-10 µA, IE =0 IE =-100 µA, IC =0 Min -12 -12 -12 -4. |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N2894CSM | Seme LAB | PNP GENERAL PURPOSE TRANSISTOR |
| 2N2894A | Seme LAB | Bipolar PNP Device |
| 2N2894ACSM | Seme LAB | PNP GENERAL PURPOSE TRANSISTOR |
| 2N2894DCSM | Seme LAB | PNP GENERAL PURPOSE TRANSISTOR |