| Part Number | 2N3015 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
2N3013 2N3014
For Specifications, See 2N3009 Data.
2N3015 (SILICON)
NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.
CASE 31
(T0·5)
Collector .
utoff Current
(VCE = 30 Vde, VBE = 0)
Collector-Cutoff Current
(VCB = 30 Vde, IE = 0, TA = 125°C)
Base Leakage Current (VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain * (IC = 150 mAde, VCE = 10 Vde) (IC =300 mAde. VCE = 0.7 Vde) Collector-Emitter Saturation Voltage- (lC = 150 mAde, IB =. |
2N3015 Datasheet and Specifications PDF
The 2N3015 is a NPN Transistor.
Key Specifications
| Part Number | 2N3015 Datasheet |
|---|---|
| Description | Small Signal Transistors |
| Manufacturer | Central Semiconductor |
| Overview | VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5. 0 30 100 150 300 150 150 50 500 500 500 500 150 150 150 2.5 1,000 1,000 20 20 1.0 1.0 2.0 2.0 10 10 5.0 10 10 10 10 10 10 10 10 10 1.0 10 10 10 10 10 10 1.0 10 10 10 5.0 1.0 1.0 1.0 1.0 10 10 10 5.0 2.0 2.0 10 10 MAX 0.40 0.40 0.50 0.50 0.40 0.40 0.25 0.50 0.50 0.50 0.50 2.00 0.40 0.20 0.20 1.40 1.0. |