Datasheet Summary
2N3013 2N3014
For Specifications, See 2N3009 Data.
2N3015 (SILICON)
NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.
CASE 31
(T0- 5)
Collector connected to case
MAXI MUM RATI NGS ITA = 25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage-
Collector-Base Voltage
Emitter-Base Voltage
Total Device DisSipation @ TA ~ 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO- VCB VEB PD
Operating and storage Junction Temperature Range
TJ' Tstg
- Applicable from 1.0 rnA to 30 rnA (Pulsed)
Value
30 60 5.0 800 4.6 3.0 17.2 -65 to+ 200
Unit
Vdc Vdc Vdc mW mW/oC Watts mW/oC °c
2-401
2N3015...
