2N3015 Overview
2N3013 2N3014 For Specifications, See 2N3009 Data. 2N3015 (SILICON) NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications. VCE = 0.7 Vde) Collector-Emitter Saturation Voltage- (lC = 150 mAde, IB = 15 mAde) (IC = 500 mAde, IB = 50 mAde) Base-Emitter Saturation Voltage.
