| Part number | 2N3015 |
|---|---|
| Datasheet | 2N3015-Motorola.pdf |
| File Size | 102.02 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN Transistor |
|
|
2N3013 2N3014 For Specifications, See 2N3009 Data. 2N3015 (SILICON) NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications. VCE = 0.7 Vde) Collector-Emitter Saturation Voltage- (lC = 150 mAde, IB = 15 mAde) (IC = 500 mAde, IB = 50 mAde) Base-Emitter Saturation Voltage.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3015 | Small Signal Transistors | Central |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3010 | NPN silicon low-power transistor |
| 2N3011 | SWITCHING TRANSISTOR |
| 2N3012 | SWITCHING TRANSISTOR |
| 2N3013 | NPN SIlicon Small-Signal Transistor |
| 2N3014 | SWITCHING TRANSISTOR |
| 2N3009 | NPN Transistor |
| 2N3020 | NPN Transistor |
| 2N3021 | PNP silicon power transistors |
| 2N3022 | PNP silicon power transistors |
| 2N3023 | PNP silicon power transistors |
