2N3010
2N3010 is NPN silicon low-power transistor manufactured by Motorola Semiconductor.
2N3010 (SILICON)
CASE 22
(TO-18)
NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications.
Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage-
VCEO
- Collector-Emitter Voltage
VCES
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Device Dissipation @TA = 25°C Derate above 25° C
Operating and Storage Junction Temperature Range
PD TJ , Tstg
- Applicable from 0.01 mAdc to 10 mAdc (Pulsed).
Value
6.0 11 15 4_0
50 0.30 1.71 -65 to +200
Unit
Vdc Vdc Vdc Vdc mAdc Watt mW/oC °c
FIGURE 1
- TURN-ON AND TURN- OFF TIME TEST CIRCUIT
Vee = +1.0 V
TO OSCILLOSCOPE...
