The 2N3171 is a Silicon PNP Power Transistor.
| Part Number | 2N3171 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable. CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -40V; IB=0 IEBO Emitter Cutoff Current VEB= -10V. |
| Part Number | 2N3171 Datasheet |
|---|---|
| Description | Bipolar PNP Device |
| Manufacturer | Seme LAB |
| Overview | 2N3171 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.. . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N3171H | Inchange Semiconductor | PNP Transistor |