| Part Number | 2N3209 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff. CH 60 2N3496 PNP AMPL/SWITCH 80 2N3497 PNP AMPL/SWITCH 120 2N3504 PNP AMPL/SWITCH 45 2N3505 PNP AMPL/SWITCH 60 2N3545 PNP SAT SWITCH 20 2N3546 PNP SAT SWITCH 15 2N3547 PNP LOW NOISE 60 2N3548 PNP LOW NOISE 60 2N3549 PNP LOW NOISE 60 2N3550 PNP LOW NOISE 60 90 45 60 60 20 15 12 12 15 20 60 20 20 60 . |
2N3209 Datasheet and Specifications PDF
The 2N3209 is a Small Signal Transistors.
| Part Number | 2N3209 Datasheet |
|---|---|
| Description | Silicon Planar PNP Transistor |
| Manufacturer | STMicroelectronics |
| Overview | . . |
| Part Number | 2N3209 Datasheet |
|---|---|
| Description | PNP SILICON TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | 2N3209 (SILICON) PNP SILICON ANNULAR TRANSISTOR designed for medium·speed saturated switching applications. • Low Collector· Emitter Saturation Voltage - VCE(sat) =0.15 Vdc (Max) @ IC = 10 mAdc • Low. (2) (3) (4) Collector Current"'" 30 rnA Turn On and Turn Off Base Currents"'" 1.5 rnA ton - VBS = +3.0 V, Vin = -7.0 V toft - Vas = -4.0 V, Vin '" +6.0 V 0.209 F~o 0.230 DlA I ~o 1 mDiA 0.500 J STYLE 1 Pin 1. Emitter 2. Base 3. Collector 0.050 0.100 0.028 0.048 To convert to millimeters mul. |
| Part Number | 2N3209 Datasheet |
|---|---|
| Description | Bipolar PNP Device |
| Manufacturer | Seme LAB |
| Overview | 2N3209 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. . |