| Part Number | 2N3441 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/369 Devices 2N3441 Qualified Level JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emi. TICS Collector-Emitter Voltage IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 100 mAdc, RBE = 100 Ω Collector-Emitter Breakdown Voltage IC = 100 mAdc, VBE = -1.5 Vdc Collector-Base Cutoff Current VCB = 140 Vdc, VBE = -1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence. |
2N3441 Datasheet and Specifications PDF
The 2N3441 is a NPN POWER SILICON TRANSISTOR.
| Part Number | 2N3441 Datasheet |
|---|---|
| Description | MEDIUM POWER SILICON NPN TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview |
LAB
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad.
SEME
2N3441
MEDIUM POWER SILICON NPN TRANSISTOR
24.33 (0.958) 24.43 (0.
* Low Saturation Voltages * High Voltage Ratings * Maximum Safe *Operating *Area Curves for DC and Pulse Operation. 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) APPLICATIONS * Series and Shunt Regulators TO *66 PIN 1 * Base PIN 2 * Emitter Case i. |
| Part Number | 2N3441 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for hi. ase MAX 7.0 UNIT ℃/W Datasheet pdf - Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEX ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining volt. |
| Part Number | 2N3441 Datasheet |
|---|---|
| Description | Silicon Power Transistor |
| Manufacturer | Comset Semiconductor |
| Overview | NPN 2N3441 SILICON POWER TRANSISTOR The 2N3441 are NPN transistors mounted in TO-66 metal package with the collector connected to the case . They are intended for use in general purpose switching and. A mA V V - IC= 100 mA , IB= 0 A VCE= 140 V , IB= 0 VCE= 140 V , VBE= 1.5 V VCE= 140 V , VBE= 1.5 V Tcase = 150°C VEB= 7 V, IC= 0 A IC= 2.7 A , IB= 900 mA IC= 40 A , IB= 4 A IC= 500 mA, VCE= 4 V IC= 2.7 A, VCE= 4 V (*) Pulse Duration = 300 µs, Duty Cycle <= 1.5% 1|2 20/09/2012 COMSET SEMICONDUCTOR. |