VPT 2N3441
NPN Silicon Power Transistor
| Part No. | 2N3441 |
|---|---|
| Datasheet | 2N3441 Download |
| Manufacturer |  VPT |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/369● TO-66 Package
● Designed for General Purpose Switching and Amplifier
APPLICATIONS
Rev. V2ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc IC = 100 mA dc, RBE = 100 Ω VBE = -1.5 V dc, IC = 100 mA dc VBE = -1.5 V dc, VCE = 140 V dc VEB = 7.0 V dc V(BR)CEO V(BR)CER V(BR)CEX V dc ICEX1 µA dc IEBO mA dc 140 150 160 — — Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage (non-saturated) VCE = 4.0 V dc, IC = 50 mA dc VCE = 4.0 V dc, IC = 0.5 A dc VCE = 4.0 V dc, IC = 1.0 A dc IC = 0.5 A dc, IB = 50 mA dc IC = 0.5 A dc, VCE = 4.0 V dc hFE - VCE(SAT) V dc VBE V dc 50 25 10 — — Max. — 20 1 — 100 — 1 1.7 Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 4.0 Vdc, IC = 0.5 A dc...
