Datasheet4U Logo Datasheet4U.com

2N3441 - NPN Silicon Power Transistor

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/369.
  • TO-66 Package.
  • Designed for General Purpose Switching and Amplifier.

📥 Download Datasheet

Datasheet Details

Part number 2N3441
Manufacturer VPT
File Size 397.03 KB
Description NPN Silicon Power Transistor
Datasheet download datasheet 2N3441 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N3441 MEDIUM POWER SILICON NPN TRANSISTOR Seme LAB
2N3441 NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N3441 Silicon NPN Power Transistors Inchange Semiconductor
2N3441 Silicon Power Transistor Comset Semiconductor
2N3440 SILICON NPN TRANSISTORS STMicroelectronics

Other Datasheets by VPT

Part Number Description
2N3440 High Voltage Silicon Transistor
2N3442 NPN Silicon Power Transistor
2N3418 NPN Medium Power Silicon Transistor
2N3418S NPN Medium Power Silicon Transistor
2N3419 NPN Medium Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3441 NPN Silicon Power Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/369 • TO-66 Package • Designed for General Purpose Switching and Amplifier Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc IC = 100 mA dc, RBE = 100 Ω VBE = -1.5 V dc, IC = 100 mA dc VBE = -1.5 V dc, VCE = 140 V dc VEB = 7.0 V dc V(BR)CEO V(BR)CER V(BR)CEX V dc ICEX1 µA dc IEBO mA dc 140 150 160 — — Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage (non-saturated) VCE = 4.0 V dc, IC = 50 mA dc VCE = 4.0 V dc, IC = 0.5 A dc VCE = 4.