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2N3440 - High Voltage Silicon Transistor

Download the 2N3440 datasheet PDF. This datasheet also covers the 2N3439 variant, as both devices belong to the same high voltage silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/368.
  • TO-39, TO-5, and UA Package Types.
  • Suitable For Drivers in High-Voltage Low Current Inverters, Switching and Series Regulators Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Emitter - Base Cutoff Current VEB = 7.0 V dc IEBO1 µA dc.
  • Collector - Emitter Cutoff Collector - Emitter Cutoff Current Collector - Base Cutoff Curre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3439-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3440
Manufacturer VPT
File Size 850.15 KB
Description High Voltage Silicon Transistor
Datasheet download datasheet 2N3440 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3439, 2N3440 NPN Low Power, High Voltage Silicon Transistor Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/368 • TO-39, TO-5, and UA Package Types • Suitable For Drivers in High-Voltage Low Current Inverters, Switching and Series Regulators Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Emitter - Base Cutoff Current VEB = 7.0 V dc IEBO1 µA dc — Collector - Emitter Cutoff Collector - Emitter Cutoff Current Collector - Base Cutoff Current VCE = 300 V dc 2N3439, L, UA VCE = 200 V dc 2N3440, L, UA VBE = -1.5 V dc VCE = 450 V dc 2N3439, L, UA VCE = 300 V dc 2N3440, L, UA VCB = 360 V dc 2N3439, L, UA VCB = 250 V dc 2N3440, L, UA ICEO µA dc ICEX µA dc — ICBO1 µA dc — Max.