VPT 2N3442
NPN Silicon Power Transistor
| Part No. | 2N3442 |
|---|---|
| Datasheet | 2N3442 Download |
| Manufacturer |  VPT |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/370● TO-3 Package
● Designed for High Voltage, High Power Switching and Amplifier
APPLICATIONS
Rev. V2ELECTRICAL CHARACTERISTICS
(TC = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current IC = 3 A dc IC = 1.5 A dc, RBE = 100 Ω VEB = 1.5 V dc, IC = 1.5 A dc VEB = 1.5 V dc, VCE = 125 V dc VCB = 140 V dc VEB = 7.0 V dc V(BR)CEO V(BR)CER V(BR)CEX V dc ICEX mA dc ICBO1 mA dc IEBO mA dc 140 150 160 — — Max. — 0.01 0.1 1 Forward Current Transfer Ratio VCE = 4.0 V dc, IC = 3 A dc hFE1 - 20 Collector - Emitter Saturation Voltage Emitter - Base Voltage (non-saturated) IC = 3 A dc, IB = 300 mA dc IC = 3 A dc, VCE = 4.0 V dc VCE(SAT) V dc VBE V dc Small-Signal Short-Circuit Forward-Current Transfer Ratio VCE = 4 V dc, IC = 3 A dc, f = 100 kHz hfe — — — 1 Collector - Emitter Cutoff C...
