2N3442 Datasheet | VPT Components

NPN Silicon Power Transistor Features - Available in JAN, JANTX, JANTXV per MIL-PRF-19500/370 - TO-3 Package - Designed for High Voltage, High Power Switching and Amplifier Applications Rev. V2 Electrical Characteristics (TC = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current IC = 3 A dc IC = 1.5 A dc, RBE = 100 Ω VEB = 1.5 V dc, IC = 1.5 A dc VEB = 1.5 V dc, VCE = 125 V dc VCB = 140 V dc VEB = 7.0 V dc V(BR)CEO V(BR)CER V(BR)CEX V dc ICEX mA dc ICBO1 mA dc IEBO mA dc 140 150 160 - - Max. - 0.01 0.1 Forward...