| Part Number | 2N3442 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3442/D High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment. ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
2N3442 Datasheet and Specifications PDF
The 2N3442 is a 10 AMPERE POWER TRANSISTOR.
| Part Number | 2N3442 Datasheet |
|---|---|
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/370 Devices 2N3442 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Volta. C = 3.0 Adc Collector-Emitter Breakdown Voltage IC = 1.5 Adc, RBE = 100 Ω Collector-Emitter Breakdown Voltage IC = 1.5 Adc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 140 Vdc, VEB = 1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794. |
| Part Number | 2N3442 Datasheet |
|---|---|
| Description | High-Power Industrial Transistors |
| Manufacturer | onsemi |
| Overview |
2N3442 High−Power Industrial Transistors
NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regula.
* Collector *Emitter Sustaining Voltage * VCEO(sus) = 140 Vdc (Min) * Excellent Second Breakdown Capability * Pb *Free Package is Available* MAXIMUM RATINGS (Note 1) Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current Base Current * Contin. |
| Part Number | 2N3442 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max)@ IC = 10A APPLICATIONS ·Designed for use in . ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V ICEO Collector Cutoff Curr. |