| Part Number | 2N3583 |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview |
The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM R.
=300V, VEB=1.5V, TC=150°C
* - 3.0 ICEO VCE=150V - 10 - 5.0 IEBO VBE=6.0V - 5.0 - 0.5 BVCEO IC=200mA 175 - 250 - VCE(SAT) IC=1.0A, IB=125mA - 5.0 - 0.75 VBE(SAT) IC=1.0A, IB=100mA * - 1.4 VBE(ON) VCE=10V, IC=1.0A - 1.4 - 1.4 hFE VCE=10V, IC=100mA 40 - 40 - hFE VCE=10V, I. |
2N3583 Datasheet
The 2N3583 is a SILICON NPN TRANSISTORS.
| Part Number | 2N3583 |
|---|---|
| Description | 5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors |
| Manufacturer | Microsemi |
| Overview |
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, satura.
* * * High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts * * High Current: 2 Amps Low VCE (SAT) 5 Amp, 250V, High Voltage NPN Silicon Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces h. |
| Part Number | 2N3583 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear . Sheet4U.co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3583 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 175 V VCE(sat) VB. |
| Part Number | 2N3583 |
|---|---|
| Description | NPN SILICON POWER TRANSISTORS |
| Manufacturer | Comset Semiconductor |
| Overview |
NPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application.
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N3583 * 2N3584 * 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Test Condition(s) 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2. |