| Part Number | 2N3720 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview |
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, satura.
* Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) * Silicon PNP Power Transistors * * DESC. |
2N3720 Datasheet and Specifications PDF
The 2N3720 is a Silicon PNP Power Transistors.
| Part Number | 2N3720 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview |
2N3719 (SILICON) 2N3720
CASE 31
(TO·S) Collector connected to case
MAXIMUM RATINGS
PNP silicon annular power transistors for highspeed, high-current switching in core, driver and Class C power appli.
.01
o
BVcoo @ Ie = 20mA - ~
10
20
30
40
SOl'S
=1== 51'5
~
, " " r""' *.. 0 ~ 5001'5 " ' 5ms I. ," * "-'" * * * '" 1 P.@Te =25OC .'.~ - ~ . ~ 1 * - I p. @IT'=j50 C -1 *- BVCIO @le =20mA: *1""" 'III.: * 0 10 20 30 40 . |
| Part Number | 2N3720 Datasheet |
|---|---|
| Description | PNP SILICON TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview |
2N3720
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
PNP SILICON TRANSISTOR
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016).
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
5.08 (0.200) typ.
2
1
3
2.54 (0.100)
* High Current Gain Bandwidth Product * Hermetic TO39 Package 45° * Full Screening Options Available TO *39 (TO205AD) Underside View PIN 1 * Emitter PIN 2 * Base PIN 3 * Collector ABSOLUTE MAXIMUM RAT. |