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2N4117A Datasheet

The 2N4117A is a N-Channel JFET General Purpose Amplifier. Download the datasheet PDF and view key features and specifications below.

Part Number2N4117A
ManufacturerCalogic LLC
Overview N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119 PIN CONFIGURATION FEATURES Leakage • Low • Low Capacit. Leakage
* Low
* Low Capacitance TO - 92 TO-72 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . ..
Part Number2N4117A
DescriptionN-Channel JFETs
ManufacturerVishay
Overview The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use . D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals APPLIC.
Part Number2N4117A
DescriptionHigh Impedence
ManufacturerMicross
Overview 2N4117A N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4117A The 2N4117A is an Ultra-High Input Impedance N-Channel JFET The 2N4117A provides ultra-high input impedance. The device i. DIRECT REPLACEMENT FOR SILICONIX 2N4117A  LOW POWER  MINIMUM CIRCUIT LOADING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current.
Part Number2N4117A
DescriptionN-Channel JFET
ManufacturerInterFET
Overview The -50V InterFET 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications. Gate leakages are typically 120fA at room temperatures. Proprietary InterFET proces.
* InterFET N0001H Geometry
* Low gate leakage: 120fA typical @20V
* Low CISS: 1.8pF typical
* Typical BVGSS: -60V
* High radiation tolerance
* RoHS, REACH, CMR compliant
* Custom test and binning options available
* SMT, TH, and bare die package options
* Edge case SPICE modeling: InterFET SPICE TO.

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