2N4123 Datasheet and Specifications PDF

The 2N4123 is a NPN Transistors.

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Part Number2N4123 Datasheet
Manufactureronsemi
Overview 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N412.
* Pb
*Free Packages are Available* MAXIMUM RATINGS Rating Collector
*Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector
*Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter
*Base Voltage Collector Current
* Continuous Total Device Dissipation @ TA = 25°C Derate abov.
Part Number2N4123 Datasheet
DescriptionNPN Transistor
ManufacturerMicro Commercial Components
Overview MCC Features   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through .   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Pin Configuration Bottom View C B E TO-92 Mec.
Part Number2N4123 Datasheet
DescriptionSILICON TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching ap. .
Part Number2N4123 Datasheet
DescriptionNPN Amplifier
ManufacturerFairchild Semiconductor
Overview 2N4123 Discrete POWER & Signal Technologies [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as gene. PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4123 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4123 NPN Gen.