The 2N4427 is a Silicon Planar NPN Transistor.
| Package | TO-39 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Part Number | 2N4427 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | . . |
| Part Number | 2N4427 Datasheet |
|---|---|
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Manufacturer | Microsemi |
| Overview |
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
AB.
* * * * Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applicati. |
| Part Number | 2N4427 Datasheet |
|---|---|
| Description | SILICON NPN RF TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER. =0, f=1.0MHz VCC=12V, Pin=100mW, f=175MHz VCC=12V, Pout=1.0W, f=175MHz VCC=12V, Pout=1.0W, f=175MHz 40 20 10 5.0 500 10 50 MAX 100 5.0 20 100 0.5 200 4.0 100 UNITS V V V mA mA W W °C UNITS μA mA μA μA V V V MHz pF dB % mW R1 (4-June 2013) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL. |
| Part Number | 2N4427 Datasheet |
|---|---|
| Description | Silicon planar epitaxial overlay transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuit.
1 1 Gp (dB) >10 >10 η (%) >45 >50 collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over any 20 ms period up to Tmb = 25 °C IC = 50 mA; VCE = 15 V; f = 200 MHz open collector * * * * * 500 * 3.5 2.0 0.4 0.4 3.5 * 200 V V A A W. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Microchip USA | 347 | 300+ : 8.64097 USD 1000+ : 8.64097 USD 10000+ : 8.64097 USD |
View Offer |
| Worldway Electronics | 26009 | 7+ : 0.8358 USD 10+ : 0.8191 USD 100+ : 0.794 USD 500+ : 0.7689 USD |
View Offer |
| Run Hong Electronics | 1168 | 1+ : 0.6426 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N4427 | Motorola Semiconductor | HIGH FREQUENCY TRANSISTOR |
| 2N4427 | ASI | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2N4427 | Advanced Power Technology | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |