2N4915 Datasheet and Specifications PDF

The 2N4915 is a COMPLEMENTARY SILICON POWER TRANSISTORS.

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Part Number2N4915 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching app. 50°C - 2.0 IEBO VEB=5.0V - 1.0 BVCEO IC=200mA (2N4904, 2N4913) 40 - BVCEO IC=200mA (2N4905, 2N4914) 60 - BVCEO IC=200mA (2N4906, 2N4915) 80 - VCE(SAT) IC=2.5A, IB=250mA - 1.0 VCE(SAT) IC=5.0A, IB=1.0A - 1.5 VBE(ON) VCE=2.0V, IC=2.5A - 1.4 hFE VCE=2.0V, IC=2.5A 25 100 hFE VCE=2.
Part Number2N4915 Datasheet
DescriptionSilicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·Complement to type 2N4904/4905/4906 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter C. stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4913 VCEO(SUS) Collector-emitter sustaining voltage 2N4914 2N4915 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEV IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cu.
Part Number2N4915 Datasheet
DescriptionSILICON EPITAXIAL NPN TRANSISTOR
ManufacturerTT Electronics
Overview SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Option. .
Part Number2N4915 Datasheet
DescriptionBipolar NPN Device
ManufacturerSeme LAB
Overview 2N4915 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36). .