2N5088 Datasheet and Specifications PDF

The 2N5088 is a Amplifier Transistor.

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Part Number2N5088 Datasheet
Manufactureronsemi
Overview 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* 3 COLLECTOR 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N5088 .
* Pb
*Free Packages are Available* 3 COLLECTOR 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector
* Emitter Voltage 2N5088 2N5089 Collector
* Base Voltage 2N5088 2N5089 Emitter
* Base Voltage Collector Current
* Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Tot.
Part Number2N5088 Datasheet
DescriptionNPN general purpose transistor
ManufacturerNXP Semiconductors
Overview NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N5087. 1 handbook, halfpage 2N5088 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM279 Fig.1 Simplified outli.
* Low current (max. 100 mA)
* Low voltage (max. 30 V). APPLICATIONS
* Low noise stages in audio equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N5087. 1 handbook, halfpage 2N5088 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM279 Fig..
Part Number2N5088 Datasheet
DescriptionNPN General Purpose Amplifier
ManufacturerFairchild Semiconductor
Overview 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is d. operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 2.8 357 Units PD RθJC RθJA Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Am.
Part Number2N5088 Datasheet
DescriptionSmall Signal Low Noise Transistors
ManufacturerTaitron Components
Overview 2N5088 2N5089 Unit VCEO VCBO VEBO IC TJ ,TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Operation and Storage Junction Temperature Range .
* NPN silicon epitaxial transistor for switching and amplifier applications
* This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 50mA
* RoHS compliance Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-.