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2N5172 Datasheet

The 2N5172 is a NPN General Purpose Amplifier. Download the datasheet PDF and view key features and specifications below.

Part Number2N5172
ManufacturerFairchild Semiconductor
Overview 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.. 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5172 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N5172 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless othe.
Part Number2N5172
DescriptionSilicon NPN Transistor
ManufacturerNTE Electronics
Overview 2N5172 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . .. .
Part Number2N5172
DescriptionNPN Transistor
ManufacturerSeCoS Halbleitertechnologie GmbH
Overview Elektronische Bauelemente 2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Amplifier Transisto.
* General Purpose Amplifier Transistor TO-92 GH Collector  
* Base  Emitter J AD B K E CF Emitter Collector
*Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMU.
Part Number2N5172
DescriptionGeneral Purpose Si-Epitaxial Planar Transistors
ManufacturerDiotec Semiconductor
Overview 2N5172 2N5172 NPN Version 2006-05-15 Power dissipation Verlustleistung E BC General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN 625 mW TO-9. j = 25°C) Min. DC current gain
* Kollektor-Basis-Stromverhältnis VCE = 10 V, IC = 10 mA Small-Signal current gain
* Kleinsignal-Stromverstärkung VCE = 10 V, IC = 1 mA, f = 1.0 kHz Collector-Base cutoff current
* Kollektor-Basis-Reststrom VCB = 25 V (E open) VCB = 25 V, Tj = 100°C (E open) Collector-.

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