2N5246 Datasheet and Specifications PDF

The 2N5246 is a HIGH-FREQUENCY AMPLIFIER JFET.

Key Specifications

PackageTO-92
Mount TypeThrough Hole
Pins3
Height4.78 mm
Length5.2 mm
Width4.19 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C

2N5246 Datasheet

2N5246 Datasheet (Motorola Semiconductor)

Motorola Semiconductor

2N5246 Datasheet Preview

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Device Dissipation Tq = 25°C Derate above 25°C Lead T.

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2N5246 Datasheet (National Semiconductor)

National Semiconductor

2N5246 Datasheet Preview

The 2N5245 thru 2N5247 series of N-channel JFETs is designed for common-source or common-gate VHF/UHF amplifier, mixer and oscillator applications to 400 MHz. Absolute Maximum Ratings Drain-Gate Vo.

ation Drain Current Common-Source Forward Transconductance Common-Source Output 9os Conductance Re Wfs> Common-Source Forward Transconductance Re (Vos) Common-Source Output Conductance Re lvisl Qss Common-Source Input Conductance Common-Source Input Capacitance Grss Common-Source Reverse Tr.

2N5246 Datasheet (Fairchild Semiconductor)

Fairchild Semiconductor

2N5246 Datasheet Preview

2N5246 2N5246 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • So.

= 25V, VDS = 0 VDS = 15V, ID = 1.0nA VDS = 15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz -0.5 1.5 3000 Min. -30 -1.0 -4.0 7.0 9500 50 Max. Units V nA V mA µmhos µmhos Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain .

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