| Part Number | 2N5744 |
|---|---|
| Manufacturer | Seme LAB |
| Overview | 2N5744 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP D. . |
The 2N5744 is a Bipolar PNP Device. Download the datasheet PDF and view key features and specifications below.
| Part Number | 2N5744 |
|---|---|
| Manufacturer | Seme LAB |
| Overview | 2N5744 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP D. . |
| Part Number | 2N5744 |
|---|---|
| Description | (2N5743 / 2N5744) Silicon PNP Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-66 package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1. pecified PARAMETER 2N5743 IC=-0.2A ;IB=0 2N5744 IC=-10A; IB=-1A IC=-20A ;IB=-4A IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-10A ; VCE=-5V IC=-20A ; VCE=-5V IC=-1A ; VCE=-10V CONDITIONS SYMBOL 2N5743 2N5744 MIN -60 TYP. MAX UNIT . |
| Part Number | 2N5744 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ge. CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A; IB= -1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A; IB= -4.0A VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -1.0A VBE(ON) Base-Emitter On Voltage IC=-10A;VCE= -5V ICEO Collector Cutoff Current VCE=. |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N5743 | SavantIC | Silicon PNP Power Transistors |