2N5804 Datasheet and Specifications PDF

The 2N5804 is a Power Transistors.

Key Specifications

Mount TypeThrough Hole
Part Number2N5804 Datasheet
ManufacturerRCA
Overview File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transistors 2N5804 2N5805 High-voltage, High~.Power Silicon N-P-N Power Transistors . JEDEC TO-3 .. Power dissipation (PT) = 110 W at SO V
* High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05** are silicon n.
Part Number2N5804 Datasheet
DescriptionBipolar NPN Device
ManufacturerSeme LAB
Overview 2N5804 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sea. package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552.
Part Number2N5804 Datasheet
Description(2N5804 / 2N5805) Silicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 . R 2N5804 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 VCEsat VBEsat ICEO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5804 ICEV Collector cut-off current 2N5805 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VEB.

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