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OO(]5LJD
Solid State Division
Power Transistors
2N5804 2N5805
High-voltage, High~.Power Silicon N-P-N Power Transistors
For Switching and Amplifier Applications
Features:
JEDEC TO-3
.. Power dissipation (PT) = 110 W at SO V
• High-voltage ratings:
VCEO(sus) = 300 V max. (2NS80S)
= 22S V max: (2NS804)
a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown.
RCA types 2NSB04 and 2NSB05** are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdown-voltage ratings and leakage-currpnt values.
2N5804 Datasheet
