Datasheet Summary
2N5797 (SILICON) thru
SILICON P- CHANNEL JUNCTION FIELD- EFFECT TRANSISTORS
Symmetrical depletion mode Junction Field- Effect Transistors de- signed primarily for low-power, audio amplifier applications.
- Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi
- Drain and Source Interchangeable
- Low Gate Reverse Current
- IGSS = 1.0 nAdc (Maxi
- Unibloc Plastic Package Encapsulation
P- CHANNEL JUNCTION FIELD- EFFECT
TRANSISTORS
- MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC
Derate above 25°C Operating and Storage Junction
Temperature Range
"'Indicates JEDEC Registered Data.
Symbol VOS...