2N5839 Datasheet and Specifications PDF

The 2N5839 is a HIGH-VOLTAGE/ HIGH-POWER SILICON N-P-N POWER TRANSISTORS.

Key Specifications

Mount TypeThrough Hole
Part Number2N5839 Datasheet
ManufacturerMotorola Semiconductor
Overview . .
Part Number2N5839 Datasheet
DescriptionPower Transistors
ManufacturerRCA
Overview DlCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site struc.
* Maximum safe-area-of-operation curves
* Low saturation voltages
* High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)
* High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ ~~ ~~ t~il ." . ."~. .00ou.!::",zu""., S ~~ ~ ~B NOTE: CURRENT DERATING AT C.
Part Number2N5839 Datasheet
Description(2N5838 - 2N5840) Silicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Coll. TICS Tj=25 unless otherwise specified PARAMETER 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 2N5840 VCEsat VBEsat ICBO ICEV IEBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5838 hFE.

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