2N5952 Datasheet and Specifications PDF

The 2N5952 is a SILICON N-CHANNEL JFETS.

Key Specifications

PackageTO-92
Mount TypeThrough Hole
Pins3
Height5.33 mm
Length5.2 mm
Width4.19 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part Number2N5952 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO. .5 3.5 6.5 yos VDS=15V, VGS=0, f=1.0kHz - 75 - 75 Ciss VDS=15V, VGS=0, f=1.0MHz - 6.0 - 6.0 Crss VDS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 rds(on) VGS=0, ID=0, f=1.0kHz - 200 - 250 gis VDS=15V, VGS=0, f=100MHz - 250 - 250 gfs VDS=15V, VGS=0, f=100MHz 3.0 7.5 3.0 6.5 gos VDS=15V, .
Part Number2N5952 Datasheet
DescriptionN-Channel JFET
ManufacturerNational Semiconductor
Overview The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly specified IqSS ranges. Absolute Maximum Ratings (25°o Reverse Gate-Drain or Ga. 0'C Gate-Source Cutoff Voltage Gate Source Voltage V D s - 15V, Id = 100 ii V DS - 15V mA Dl = 1.2 In- 1 mA lO -0.7 mA mA Di = 0.4 In = 0-25 mA Saturation Drain _ Current V D S= 1BV, VQS" 0, (Note 1) Drain-Source ON Resistance vgs-o, di = o f- 1 kHz Common-Source Forward Transconductance C.
Part Number2N5952 Datasheet
DescriptionN-Channel RF Amplifier
ManufacturerFairchild Semiconductor
Overview 2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. 1 TO-92 Absolut. off) Gate-Source Cutoff Voltage On Characteristics VDS = 0, IG = -1.0µA VGS = -15V, VDS = 0 VDS = 15V, ID = 100nA IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics VDS = 15V, VGS = 0 gfs Forward Transfer Conductance gos Output Conductance Ciss Input Capacitance Crss Reverse .

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