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2N5952
2N5952
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
1 TO-92
Absolute Maximum Ratings * TC=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
Symbol
Parameter
Value
Units
VDG Drain-Gate Voltage
30
VGS Gate-Source Voltage
-30
IGF Forward Gate Current
10
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V V mA °C
NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits.
2N5952 Datasheet
