Fairchild Semiconductor 2N5952
N-Channel RF Amplifier
| Part No. | 2N5952 |
|---|---|
| Datasheet | 2N5952 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel RF Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
* TC=25°C unless otherwise noted 1. Gate 2. Source 3. Drain Symbol Parameter Value Units VDG Drain-Gate Voltage 30 VGS Gate-Source Voltage -30 IGF Forward Gate Current 10 TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. V V mA °C NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage On Characteristics VDS = 0, IG = -1.0µA VGS = -15V, VDS = 0 VDS = 15V, ID = 100nA IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics VDS = 15V, VGS = 0 gfs Forward Transf...
