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2N5951 — N-Channel RF Amplifier
September 2007
2N5951 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VDG VGS IGF TJ, TSTG
Parameter
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N5951 Datasheet
