2N6034 Datasheet and Specifications PDF

The 2N6034 is a MIDIUM POWER TRANSISTOR.

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Part Number2N6034 Datasheet
ManufacturerSTMicroelectronics
Overview . .
Part Number2N6034 Datasheet
DescriptionPlastic Darlington Complementary Silicon Power Transistors
Manufactureronsemi
Overview (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are design.
* ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS
* Epoxy Meets UL 94 V
*0 @ 0.125 in
* Pb
*Free Packages are Available* MAXIMUM RATINGS Rating Collector
*Emitter Voltag.
Part Number2N6034 Datasheet
Description(2N6034 - 2N6036) Silicon Power Transistor
ManufacturerSavantIC
Overview ·With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2). ilicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6034 VCEO(SUS) Collector-emitter sustaining voltage 2N6035 2N6036 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage.
Part Number2N6034 Datasheet
DescriptionCOMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and . ess otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA (2N6034, 2N6037) 40 BVCEO IC=100mA (2N6035, 2N6038) 60 BVCEO IC=100mA (2N6036, 2N6039) 80 V.