| Part Number | 2N6050 |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switchin. VEB=5.0V BVCEO IC=100mA, (2N6050, 2N6057) 60 BVCEO IC=100mA, (2N6051, 2N6058) 80 BVCEO IC=100mA, (2N6052, 2N6059) 100 VCE(SAT) IC=6.0A, IB=24mA VCE(SAT) IC=12A, IB=120mA VBE(SAT) IC=12A, IB=120mA VBE(ON) VCE=3.0V, IC=6.0A hFE VCE=3.0V, IC=6.0A 750 hFE VCE=3.0V, IC=12A 100 hfe VC. |
2N6050 Datasheet
The 2N6050 is a COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS.
| Part Number | 2N6050 |
|---|---|
| Description | POWER COMPLEMENTARY SILICON TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview |
PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 m.
lue
1.17
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP 2N6050 * 2N6051 * 2N6052 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =-60 V, VBE=1.5 V VCE= VCEX =-80 V, VBE=1.5 V VCE= VCEX =-1. |
| Part Number | 2N6050 |
|---|---|
| Description | Power Transistor |
| Manufacturer | Solid State |
| Overview | . . |
| Part Number | 2N6050 |
|---|---|
| Description | Bipolar PNP Device |
| Manufacturer | Seme LAB |
| Overview | 2N6050 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. nd package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 5. |