2N6055 Datasheet

The 2N6055 is a Bipolar NPN Device.

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Part Number2N6055
ManufacturerSeme LAB
Overview 2N6055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. ge dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E.
Part Number2N6055
DescriptionCOMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . .
Part Number2N6055
DescriptionPOWER COMPLEMENTARY Silicon TRANSISTORS
ManufacturerComset Semiconductors
Overview NPN 2N6055 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6055 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use i. Test Condition(s) VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =60 V, VBE=-1.5 V TC=150°C 2N6055 2N6055 2N6055 2N6055 2N6055 Min 60 Typ - MAx Unit 500 5 0.5 2.0 µA mA mA mA V ICEX ICEO IEBO VCEO(SUS) Collector Cutoff VCE=30 Vdc, IB=0 Current Emitter Cutoff VEB=5 V Current Collector-Emitter Sustaining.
Part Number2N6055
Description(2N6055 / 2N6056) Silicon Power Transistor
ManufacturerSavantIC
Overview ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2. ion Silicon NPN Power Transistors CHARACTERISTICS Tm=25 unless otherwise specified PARAMETER 2N6055 IC=0.1 A ;IB=0 2N6056 IC=4A ;IB=16mA IC=8A ;IB=80mA IC=8A ;IB=80mA IC=4A ; VCE=3V 2N6055 ICEO Collector cut-off current 2N6056 2N6055 ICEX Collector cut-off current 2N6056 IEBO hFE-1 hFE-2 Cob Emitte.