2N6058 Datasheet

The 2N6058 is a DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS.

Datasheet4U Logo
Part Number2N6058
Manufactureronsemi
Overview ON Semiconductort PNP Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. 2N6052* NPN • Hi. ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base voltage 5.0 12 20 Collector Current
* Continuous Peak Base Current Tota.
Part Number2N6058
DescriptionCOMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switchin. VEB=5.0V BVCEO IC=100mA, (2N6050, 2N6057) 60 BVCEO IC=100mA, (2N6051, 2N6058) 80 BVCEO IC=100mA, (2N6052, 2N6059) 100 VCE(SAT) IC=6.0A, IB=24mA VCE(SAT) IC=12A, IB=120mA VBE(SAT) IC=12A, IB=120mA VBE(ON) VCE=3.0V, IC=6.0A hFE VCE=3.0V, IC=6.0A 750 hFE VCE=3.0V, IC=12A 100 hfe VC.
Part Number2N6058
DescriptionPOWER COMPLEMENTARY Silicon TRANSISTORS
ManufacturerComset Semiconductors
Overview NPN 2N6057 – 2N6058 – 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 m. t °C/W 17/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N6057
* 2N6058
* 2N6059 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =80 V, VBE=-1.5 V VCE= VCEX =100 V VBE=-1.5 .
Part Number2N6058
DescriptionPower Transistor
ManufacturerSolid State
Overview . .