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2N6058 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Download the 2N6058 datasheet PDF. This datasheet also covers the 2N6050 variant, as both devices belong to the same complementary silicon darlington power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

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Note: The manufacturer provides a single datasheet file (2N6050-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
2N6050 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6051 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6052 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6053 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6054 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.