Datasheet Details
| Part number | 2N6057 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 257.33 KB |
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Datasheet | 2N6057 2N6050 Datasheet (PDF) |
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Overview: 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN PLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6057 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 257.33 KB |
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Datasheet | 2N6057 2N6050 Datasheet (PDF) |
|
|
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: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are plementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.
MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 2N6052 2N6059 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA, (2N6050, 2N6057) 60 BVCEO IC=100mA, (2N6051, 2N6058) 80 BVCEO IC=100mA, (2N6052, 2N6059) 100 VCE(SAT) IC=6.0A, IB=24mA VCE(SAT) IC=12A, IB=120mA VBE(SAT) IC=12A, IB=120mA VBE(ON) VCE=3.0V, IC=6.0A hFE VCE=3.0V, IC=6.0A 750 hFE VCE=3.0V, IC=12A 100 hfe VCE=3.0V, IC=5.0A, f=1.0kHz 300 fT VCE=3.0V, IC=5.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (PNP types) Cob VCB=10V, IE=0, f=100kHz (NPN types) MAX 0.5 5.0 1.0 2.0 2.0 3.0 4.0 2.8 18K 500 300 UNITS V V V A A A W °C °C/W UNITS mA mA mA mA V V V V V V V MHz pF pF R1 (18-September 2012) 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN PLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6057 | Bipolar NPN Device | Seme LAB |
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2N6057 | POWER COMPLEMENTARY Silicon TRANSISTORS | Comset Semiconductors |
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2N6057 | Silicon NPN Transistor | NTE |
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2N6057 | Silicon NPN Power Transistors | Inchange Semiconductor |
| Solid State | 2N6057 | Power Transistor | Solid State |
| Part Number | Description |
|---|---|
| 2N6050 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6051 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6052 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6053 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6054 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6055 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6056 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6058 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6059 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |