| Part Number | 2N6057 |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview |
NPN 2N6057 – 2N6058 – 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 m.
t
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N6057 * 2N6058 * 2N6059 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =80 V, VBE=-1.5 V VCE= VCEX =100 V VBE=-1.5 . |
2N6057 Datasheet
The 2N6057 is a POWER COMPLEMENTARY Silicon TRANSISTORS.
| Part Number | 2N6057 |
|---|---|
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switchin. VEB=5.0V BVCEO IC=100mA, (2N6050, 2N6057) 60 BVCEO IC=100mA, (2N6051, 2N6058) 80 BVCEO IC=100mA, (2N6052, 2N6059) 100 VCE(SAT) IC=6.0A, IB=24mA VCE(SAT) IC=12A, IB=120mA VBE(SAT) IC=12A, IB=120mA VBE(ON) VCE=3.0V, IC=6.0A hFE VCE=3.0V, IC=6.0A 750 hFE VCE=3.0V, IC=12A 100 hfe VC. |
| Part Number | 2N6057 |
|---|---|
| Description | Bipolar NPN Device |
| Manufacturer | Seme LAB |
| Overview | 2N6057 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. kage dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.. |
| Part Number | 2N6057 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed fo. NPN Darlingtion Power Transistor isc Product Specification 2N6057 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA VCE(sat. |