2N6281 Datasheet and Specifications PDF

The 2N6281 is a Silicon NPN Power Transistor.

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Part Number2N6281 Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : VCEO=150V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS. age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Current Gain IC=20A; VCE=4V hFE-3 DC Cu.
Part Number2N6281 Datasheet
DescriptionHIGH-POWER NPN SILICON TRANSISTORS
ManufacturerUnknown Manufacturer
Overview 2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Volta. .
Part Number2N6281 Datasheet
DescriptionNPN Transistor
ManufacturerSSDI
Overview 40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa. .
Part Number2N6281 Datasheet
DescriptionNPN POWER TRANSISTORS
ManufacturerNew Jersey Semi-Conductor
Overview . .