2N6338 Datasheet and Specifications PDF

The 2N6338 is a High-Power NPN Silicon Transistors.

Datasheet4U Logo
Part Number2N6338 Datasheet
Manufactureronsemi
Overview 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − V. ÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction Temperature Range Symbol VCB VCEO VEB IC IB PD TJ, Tstg 2N6338 2N6341 120 180 100 150 6.0 25 50 10 200 1.14
* 65 to + 200 Unit Vdc Vdc Vdc Adc Adc W W/°C _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎ.
Part Number2N6338 Datasheet
DescriptionNPN Transistor
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applica. Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range Symbol VCB VCEO VEB IC IB PD TJ, Tstg 2N6338 120 100 2.
Part Number2N6338 Datasheet
DescriptionNPN POWER SILICON TRANSISTOR
ManufacturerMicrosemi
Overview TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509 Devices 2N6338 2N6341 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage. off Current VCE = 100 Vdc, VBE = 1.5 Vdc VCE = 150 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 180 Vdc 2N6338 2N6341 2N6338 2N6341 2N6338 2N6341 V(BR)CEO 100 150 50 Vdc ICEO µAdc ICEX IEBO 10 10 100 10 10 µAdc µAdc µAdc 2N6338 .
Part Number2N6338 Datasheet
DescriptionSilicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit application. .