2N6377 Datasheet and Specifications PDF

The 2N6377 is a 50 Amp Power Transistors.

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Part Number2N6377 Datasheet
ManufacturerMotorola Semiconductor
Overview . .
Part Number2N6377 Datasheet
Description(2N6377 - 2N6379) HIGH-POWER PNP SILICON POWER TRANSISTOR
ManufacturerNew England Semiconductor
Overview . .
Part Number2N6377 Datasheet
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS. n Voltage IC=-20A; IB=- 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-50A; IB= -10A VBE(sat)-1 Base-Emitter Saturation Voltage IC=-20A; IB=- 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=-50A; IB= -10A hFE-1 DC Current Gain IC=-1A; VCE= -4V hFE-2 DC Current Gain IC=-20A; VCE= .