Datasheet4U Logo Datasheet4U.com

2N6377 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Vol

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6377 50 Amp Power Transistors Motorola
2N6377 (2N6377 - 2N6379) HIGH-POWER PNP SILICON POWER TRANSISTOR New England Semiconductor
2N6370 NPN SILICON RF POWER TRANSISTOR ETC
2N6371 Silicon Power Transistor SavantIC
2N6371 HIGH POWER SILICON NPN TRANSISTORS Comset Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number Description
2N6378 Silicon PNP Power Transistor
2N6322 NPN Transistor
2N6329 Silicon PNP Power Transistor
2N6330 Silicon PNP Power Transistor
2N6331 Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6377 isc website： www.iscsemi.
Published: |