| Part number | 2N6377 |
|---|---|
| Datasheet | 2N6377-INCHANGE.pdf |
| File Size | 215.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6377 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=-50mA IEBO Emitter-Base Cutoff Current VBE=-6V ICEO Collector-Emitter Cutoff Current VCE= -50V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-20A; IB=- 2A VCE(sat)-2 Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6377 | 50 Amp Power Transistors | Motorola |
| New England Semiconductor | 2N6377 | (2N6377 - 2N6379) HIGH-POWER PNP SILICON POWER TRANSISTOR | New England Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6378 | Silicon PNP Power Transistor |
| 2N6322 | NPN Transistor |
| 2N6329 | Silicon PNP Power Transistor |
| 2N6330 | Silicon PNP Power Transistor |
| 2N6331 | Silicon PNP Power Transistor |
| 2N6343 | Thyristor |
| 2N6348 | Thyristor |
| 2N6355 | NPN Transistor |
| 2N6356 | NPN Transistor |
| 2N6357 | NPN Transistor |
