| Part Number | 2N6796 |
|---|---|
| Manufacturer | Intersil |
| Overview |
2N6796
Data Sheet November 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for appli.
* 8A, 100V * rDS(ON) = 0.180Ω * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796 * Related Literature - TB334 “Guidelines for Solde. |