Datasheet4U Logo Datasheet4U.com

2N7076 Datasheet

The 2N7076 is a N-Channel Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2N7076
ManufacturerTEMIC Semiconductors
Overview N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 200 rDS(on) (W) 0.10 ID (A) 28 TO-254AA D Hermetic Package 2N7076 G Case Isolated DSG Top View S N-Channel MOSFET Absolut. -May-94 2N7076 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic Symbol V(BR)DSS VG.
Part Number2N7076
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mod. e VGS=0; ID= 250uA VGS(TH) Gate Threshold Voltage VDS=0; ID= 250uA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=18A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=160V; VGS= 0 2N7076 MIN TYP. MAX UNIT 200 V 2.0 4.0 V 0.10 Ω ±100.